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| 2006 Tutorials |
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| Monday, October 16, 2006 8:00 a.m. to 12:00 p.m. Chemical Mechanical Planarization Fundamentals
and Process Modeling Chemical mechanical planarization (CMP) is a widely used manufacturing process among world semiconductor device and MEMS manufacturers due to its ability to efficiently planarize a wide range of material combinations as part of the backend semiconductor fabrication process. The process, mechanically similar to lapping or polishing, has a complex interaction of mechanical abrasive action (when abrasives are used) and fluid behavior and chemistry. The purpose of this tutorial is to provide the attendee with the background, existing theory and practical knowledge necessary for the successful implementation of CMP. A review of modeling techniques and comprehensive models of the process will also be presented. The tutorial begins with a brief introduction to CMP and the motivation and constraints on its application, including unique characteristics of CMP vis-a-vis more conventional loose abrasive processes. The basic mechanics of the process are introduced including operating details of commercial tools. The role of chemistry in CMP is reviewed. Based on process modeling requirements, the basis for and details of a comprehensive material removal model (including influence of abrasive size, geometry and features, pad topography and mechanical characteristics, and process parameters) are presented. The validity of the model is reviewed using data from experimental validation for typical applications (copper damascene, shallow trench isolation, and interlayer dielectric). The tutorial includes a review of potential for process monitoring via sensor feedback. Future challenges in CMP modeling and application will be reviewed. Tutorial handouts will include copies of material presented and selected articles on CMP, as well as a bibliography for research in this area. Participants should have some familiarity with precision machining processes. A basic knowledge of semiconductor fabrication would be useful by not required.
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